Effect of defects on Q factors of single-crystal diamond MEMS resonators
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-06-12 |
| Journal | Functional Diamond |
| Authors | Zilong Zhang, Guo Chen, Keyun Gu, Satoshi Koizumi, Meiyong Liao |
| Institutions | National Institute for Materials Science |
| Citations | 13 |
Abstract
Section titled āAbstractāA resonator with a high Q factor is generally pursued in the single-crystal diamond (SCD) microelectromechanical system (MEMS) for high-performance sensors. In this report, we investigate the oxygen etching effect of SCD on the Q factors of the SCD resonators by using the Raman spectroscopy spatial mapping. We aim to establish the etch pit effect on the Q factors of the SCD MEMS resonators. The 2D Raman imaging technique discloses the dislocations and the local stress in the SCD MEMS resonators in microscale. It is observed that the full width half maximum (FWHM) of the Raman spectra of the SCD resonators has marked relationship with the Q factors of the SCD resonators. The etch pits resulted from the dislocations have weak influence on the Q factors of the SCD resonators.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2021 - Progress in semiconductor diamond photodetectors and MEMS sensors
- 2007 - A review of microcantilevers for sensing applications