Skip to content
6CCVD Research

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-06-01
JournalJournal of Applied Physics
AuthorsJ.M. Brown, Saurabh Vishwakarma, David J. Smith, R. J. Nemanich
InstitutionsArizona State University
Citations15

Abstract

Section titled ā€œAbstractā€

Cubic boron nitride (c-BN), with a small 1.4% lattice mismatch with diamond, presents a heterostructure with multiple opportunities for electronic device applications. However, the formation of c-BN/diamond heterostructures has been limited by the tendency to form hexagonal BN at the interface. In this study, c-BN has been deposited on free standing polycrystalline and single crystal boron-doped diamond substrates via electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD), employing fluorine chemistry. In situ x-ray photoelectron spectroscopy (XPS) is used to characterize the nucleation and growth of boron nitride (BN) films as a function of hydrogen gas flow rates during deposition. The PECVD growth rate of BN was found to increase with increased hydrogen gas flow. In the absence of hydrogen gas flow, the BN layer was reduced in thickness or etched. The XPS results show that an excess of hydrogen gas significantly increases the percent of sp2 bonding, characteristic of hexagonal BN (h-BN), particularly during initial layer growth. Reducing the hydrogen flow, such that hydrogen gas is the limiting reactant, minimizes the sp2 bonding during the nucleation of BN. TEM results indicate the partial coverage of the diamond with thin epitaxial islands of c-BN. The limited hydrogen reaction is found to be a favorable growth environment for c-BN on boron-doped diamond.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - Cubic boron nitride films [Crossref]
  2. 2019 - Recent progress of boron nitrides [Crossref]
  3. 2015 - In situ photoelectron spectroscopic characterization of c-BN films deposited via plasma enhanced chemical vapor deposition employing fluorine chemistry [Crossref]
  4. 2015 - Electron affinity of cubic boron nitride terminated with vanadium oxide [Crossref]
  5. 1998 - Observation of a negative electron affinity for boron nitride [Crossref]
  6. 2003 - Recent advances in cubic boron nitride deposition [Crossref]
  7. 2000 - Semiconducting diamond and diamond devices
  8. 2020 - Performance of 5-Ī¼m PIN diamond diodes as thermal neutron detectors [Crossref]
  9. 2018 - A 4.5ā€‰Ī¼m PIN diamond diode for detecting slow neutrons [Crossref]
  10. 2000 - Radiation Detection and Measurement

Reads Similar to This

Tunable Quantum Dots from Atomically Precise Graphene Nanoribbons Using a Multiā€Gate Architecture A perspective on diamond heterojunction devices ac Susceptometry of 2D van der Waals Magnets Enabled by the Coherent Control of Quantum Sensors