Skip to content
6CCVD Research

Effects of different current confinement layers in GaN-based VCSELs

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-07-01
JournalAIP Advances
AuthorsY.T. Chen, Yang Mei, Zhongming Zheng, Rongbin Xu, Yachao Wang
InstitutionsXiamen University
Citations2

Abstract

Section titled ā€œAbstractā€

For GaN-based vertical-cavity surface-emitting lasers (VCSELs), a suitable current confinement layer is essential for high-performance devices. The effect of different current confinement layers, including SiO2, AlN, and diamond, on the performance of GaN-based VCSELs was compared through simulation. The devicesā€™ heat dissipation and current confinement characteristics were analyzed based on the electro-opto-thermal model. Considering thermal management, the diamond was a better candidate under high injected current. Benefiting from the excellent heat dissipation, the device with diamond shows a significant improvement in output power and the thermal roll-over current. This work gives a superior option for the current confinement layer and can be helpful for future design and fabrication of high-power GaN-based VCSELs.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2019 - GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors [Crossref]
  2. 2018 - Progress and prospects of GaN-based VCSEL from near UV to green emission [Crossref]
  3. 2016 - Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers [Crossref]
  4. 2020 - Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20āˆ’21} semi-polar GaN [Crossref]
  5. 2016 - Gallium Nitride Materials and Devices XI Conferences, San Francisco [Crossref]
  6. 2018 - Green vertical-cavity surface-emitting lasers based on combination of blue-emitting quantum wells and cavity-enhanced recombination [Crossref]
  7. 2020 - Multiwavelength GaN-based surface-emitting lasers and their design principles [Crossref]
  8. 2021 - Dynamic characteristics and device degradation of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN distributed Bragg reflector [Crossref]

Reads Similar to This

Fixed charges investigation in Al2O3/hydrogenated-diamond metal-oxide-semiconductor capacitors Stability of Interface Morphology and Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at Growth and Annealing Temperatures Millimetre-wave and terahertz IMPATT sources - influence of inter-carrier interactions