Productivity of Concentration-Dependent Conversion of Substitutional Nitrogen Atoms into Nitrogen-Vacancy Quantum Emitters in Synthetic-Diamond by Ultrashort Laser Pulses
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-07-09 |
| Journal | Micromachines |
| Authors | S. I. Kudryashov, Š. Š. ŠŠ°Š½ŠøŠ»Š¾Š², Evgeny V. Kuzmin, Nikita Smirnov, Alexey Gorevoy |
| Institutions | Saint Petersburg Mining University, P.N. Lebedev Physical Institute of the Russian Academy of Sciences |
| Citations | 6 |
| Analysis | Full AI Review Included |
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View Original Abstract
Tightly focused 515-nm, 0.3-ps laser pulses modify in a laser filamentation regime the crystalline structure of an Ib-type high-pressure, high-temperature (HPHT) synthesized diamond in a thin-plate form. The modified microregions (micromarks) in the yellow and colorless crystal zones, possessing different concentrations of elementary substitutional nitrogen (N) impurity atoms (C-centers), exhibit their strongly diminished local IR absorption (upon correction to the thickness scaling factor). Simultaneously, local visible-range (400-550 nm) absorption coefficients were increased, and photoluminescence (PL) yield was strongly enhanced in the broad range of 450-800 nm. The strong yellow-red PL enhancement saturates with laser exposure, implying the complete conversion of C-centers into nitrogen-vacancy (NV0,ā) ones due to the laser-induced generation of Frenkel āinterstitial-vacancyā I-V carbon pairs. The other emerging blue-green (>470 nm) and green-yellow (>500 nm) PL bands were also simultaneously saturated versus the laser exposure. The observed IR/optical absorption and PL spectral changes enlighten the ultrashort pulse laser inscription of NV0ā-based quantum-emitter centers in synthetic diamonds and enable the evaluation of the productivity of their inscription along with the corresponding I-V generation rates.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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