Telecom-wavelength NV-center analogs in cubic boron nitride
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-07-12 |
| Journal | Physical review. B./Physical review. B |
| Authors | Mark E. Turiansky, Chris G. Van de Walle |
| Institutions | University of California, Santa Barbara |
| Citations | 8 |
Abstract
Section titled āAbstractāWe apply first-principles calculations to investigate ${V}{\mathrm{B}}\text{\ensuremath{-}}{\mathrm{C}}{\mathrm{B}}$ and ${V}{\mathrm{B}}\text{\ensuremath{-}}{\mathrm{Si}}{\mathrm{B}}$ complexes in cubic boron nitride as potential quantum defects. We find that these centers possess a triplet ground-state spin, analogous to that of the prototype quantum defect, the NV center in diamond. In contrast, the main optical transition of these complexes occurs in the telecom O-band, making them appealing for quantum networking applications. Furthermore, the coupling to phonons is weaker than in the NV center, resulting in a much larger fraction of photons (22%) being emitted in the zero-phonon line. One inherent drawback of the longer emission wavelength is stronger nonradiative recombination; however, the resulting lower quantum efficiency can be mitigated by cavity coupling.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2010 - Fiber-Optic Communication Systems [Crossref]