Effect of Mg doping on carrier recombination in GaN
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-08-22 |
| Journal | Journal of Applied Physics |
| Authors | S. MarcinkeviÄius, Yi Chao Chow, Shuji Nakamura, James S. Speck |
| Institutions | University of California, Santa Barbara, KTH Royal Institute of Technology |
| Citations | 2 |
Abstract
Section titled āAbstractāTime-resolved photoluminescence measurements have been performed on Mg-doped GaN for Mg concentrations in the low- to mid-1019 cmā3. As-grown and annealed (600-675 Ā°C) samples were studied. In the as-grown samples, the nonradiative carrier lifetime was found to be about 200 ps and nearly independent of the Mg concentration. Upon annealing, the carrier lifetimes shorten to ā¼150 ps but, again, show little dependence on the annealing temperature. The analysis of possible Shockley-Read-Hall recombination centers and their behavior during doping and annealing suggests that the main nonradiative recombination center is the Mg-nitrogen vacancy complex. The weak dependence of the PL decay times on temperature indicates that carrier capture into this center has a very low potential barrier, and the nonradiative recombination dominates even at low temperatures.