Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates (Adv. Funct. Mater. 14/2022)
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-04-01 |
| Journal | Advanced Functional Materials |
| Authors | Danshuo Liu, Lin Hu, Xuelin Yang, Zhihong Zhang, Haodong Yu |
| Institutions | Beijing University of Technology, Beijing Institute of Technology |
| Citations | 1 |
Abstract
Section titled “Abstract”Arbitrary Substrates In article number 2113211, Xuelin Yang, Bing Huang, Bo Shen, and co-workers propose a strategy of polarization-driven-orientation selective growth and demonstrate that single-crystalline GaN can in principle be achieved on polycrystalline diamond or other substrates by utilizing a composed buffer layer consisting of graphene and polycrystalline physical-vapor-deposited AlN. This strategy can be extended to the growth of any emergent single-crystalline semiconductor films on any arbitrary freestanding substrates by choosing appropriate 2D materials with matched crystal structures.