Semiconductor piezoresistance prediction model for mechanical sensor design
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-08-19 |
| Journal | Electrical Engineering in Japan |
| Authors | Ryo Nakanishi, Ryo Morikawa, Masashi Kawai, Takumi Nakahara, Toshiyuki Toriyama |
| Institutions | Ritsumeikan University |
Abstract
Section titled āAbstractāAbstract This paper addresses semiconductor piezoresistive materials selection in MEMS engineering design. From the practical engineering point of view, it is important to understand piezoresistance properties of semiconductors even if less accuracy under feasibility design phase. However, piezoresistance is frequently analyzed based on first principle electronic band structure simulations by sophisticate physicists. Practical engineers not familiar with this simulation cannot directly apply useful information derived from the result of simulation. This paper provides practical prediction method for piezoresistance based on electronic band parameters obtained from the stateāofātheāart solidāstate physics. It is demonstrated that the crucial parameters which control the pātype shear piezoresistance coefficient Ļ 44 in diamond and zincāblend single crystals are the inverse of square of bond length in unit cell atom, the square root of valence light hole mass, and the shear elastic compliance coefficient S 44 .
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1996 - Semiconductor Physics: An Introduction
- 1960 - The effects of deformation on electrical conductivity of semiconductors
- 1985 - Physical Properties of Crystals Their Representation by Tensors and Matrices