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6CCVD Research

High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-09-11
JournalApplied Physics Letters
AuthorsYan Huang, Junfeng Xiao, Ran Tao, Zhi Liu, Yiran Mo
InstitutionsNanjing University, Collaborative Innovation Center of Advanced Microstructures
Citations9

Abstract

Section titled ā€œAbstractā€

Hydrogen-terminated diamond surfaces, emerging as a promising two-dimensional (2D) electron platform with great thermal and electronic properties, hold great potential for the next-generation high power and high frequency field effect transistor (FET). However, ideal gate dielectrics with high crystallinity and defect-free surfaces are still largely elusive. In this work, using the contamination-free pickup transfer method, hexagonal boron nitride (h-BN) flakes were fabricated on top of the hydrogen-terminated diamond surface to serve as a gate material and the passivation layer. The morphological and optical characterizations revealed the formation of homogeneous and intimate interface between h-BN and diamond. Benefiting from the h-BN gate dielectric layer, the maximum drain current density, subthreshold swing, and on/off ratio of diamond FET are measured to be āˆ’210.3 mA mmāˆ’1, 161 mV/dec, and 106, respectively. Especially, the transport measurement shows an almost constant Hall mobility of around 260 cm2 Vāˆ’1 sāˆ’1 in the hole density range of 2 āˆ’ 6 Ɨ 1012 cmāˆ’2, suggesting the excellent gate controllability of h-BN. Our results indicate that h-BN could form high-quality interface with hydrogen-terminated diamond, paving the way for the development of diamond-based electronic applications.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  4. 2018 - A high frequency hydrogen-terminated diamond MISFET with fT/fmax of 70/80 GHz [Crossref]
  5. 2013 - Metal oxide semiconductor structure using oxygen-terminated diamond [Crossref]
  6. 1996 - Hydrogen-terminated diamond surfaces and interfaces [Crossref]
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  8. 2021 - Surface transfer doping of diamond: A review [Crossref]
  9. 2020 - Prospects for wide bandgap and ultrawide bandgap CMOS devices [Crossref]
  10. 2021 - Ultrawide bandgap semiconductors [Crossref]

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