Kelvin Probe Characterization of Nanocrystalline Diamond Films with SiV Centers as Function of Thickness
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-09-16 |
| Journal | physica status solidi (a) |
| Authors | Jaroslav KuliÄek, Maxmilian Marek, Nirmal Kumar, Jan Fait, Å tÄpĆ”n PotockĆ½ |
| Institutions | Czech Academy of Sciences, Institute of Physics, Czech Technical University in Prague |
Abstract
Section titled āAbstractāOptically active color centers in diamonds have been intensively studied due to their potential in photonics, energy harvesting, biosensing, and quantum computing. Silicon vacancy (SiV) center offers an advantage of suitable emission wavelength and narrow zeroāphonon line at room temperature. Measurement of surface potential and photovoltage can provide better understanding of the physics and control of SiV light emission, such as charge states and charging effects. Herein, optoelectronic properties of nanocrystalline diamond films with SiV centers at different layer thicknesses (10-200 nm, controlled by the growth time) under ambient conditions are studied. Timeādependent measurements are performed in the light-dark-light cycle. Positive photovoltage arises on samples with SiV layer thicknesses below 55 nm on both Hā and Oāterminated surfaces. Above 55 nm the photovoltage switches to negative. This layer thickness thus represents a halfway boundary between surfaceācontrollable and bulk SiV centers dominant contribution. A band diagram scheme explaining the photovoltage switching mechanism is provided.