MD simulation of chemically enhanced polishing of 6H-SiC in aqueous H2O2
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-11-01 |
| Journal | Journal of Manufacturing Processes |
| Authors | Shengyao Yang, Xuliang Li, Yitian Zhao, Md. Mamun Al-Amin, Lisbeth Grøndahl |
| Institutions | The University of Queensland, Hong Kong Polytechnic University |
| Citations | 26 |
Abstract
Section titled âAbstractâChemical enhanced polishing (CEP) is a widely employed final process for achieving precise surface shaping and planarization of semiconductor wafers. However, determining the chemical effect involved in material removal through experimental means is extremely challenging. In this study, we conducted reactive force field (ReaxFF) molecular dynamics (MD) simulations to gain insight into the chemical effects of CEP using an aqueous hydrogen peroxide (H2O2) diamond suspension as a polishing medium for 6H-SiC single crystals. The inclusion of aqueous H2O2 resulted in the formation of SiOH and COH species, which are comparatively easier to remove through mechanical abrasion. Furthermore, an increase in H2O2 concentration was found to enhance the material removal. The MD simulations also revealed that the chemical effects on the Si-face of 6H-SiC were more pronounced than those on the C-face due to the generation of a greater number of SiO species and the favourable atomic structure of the Si-face for chemical removal. The results showed that the material remove rate on the Si-face is greater than that on the C-face during polishing, aligning with the findings from MD simulation. Furthermore, a systematic experimental study was carried out to examine the influence of various conditions on material removal rate and surface quality in both polishing and lapping processes.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
Section titled âReferencesâ- 1992 - Recent developments in SiC single-crystal electronics [Crossref]
- 2004 - Ultrahigh-quality silicon carbide single crystals [Crossref]
- 2020 - A review on the joining of SiC for high-temperature applications [Crossref]
- 2022 - A review on precision polishing technology of single-crystal SiC [Crossref]
- 2017 - Prediction of sawing force for single-crystal silicon carbide with fixed abrasive diamond wire saw [Crossref]
- 2020 - Amorphization and dislocation evolution mechanisms of single crystalline 6H-SiC [Crossref]
- 2021 - Effect of abrasive grain position patterns on the deformation of 6H-silicon carbide subjected to nano-grinding [Crossref]
- 2017 - SIC power devices in power electronics: an overview
- 2010 - Impact of SiC devices on hybrid electric and plug-in hybrid electric vehicles [Crossref]
- 2013 - Full SiC power module with advanced structure and its solar inverter application