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6CCVD Research

Research on Stability of H-Terminated Diamond MESFET

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-11-27
AuthorsLei Ge, Qunhe Zhang, Yan Peng, Mingsheng Xu, Xiangang Xu
InstitutionsState Key Laboratory of Crystal Materials, Shandong University

Abstract

Section titled ā€œAbstractā€

In this paper, metal-semiconductor field effect transistor devices based on hydrogen-terminated diamond were fabricated, and the output stability of the devices under cyclic testing and low-temperature conditions was investigated. Under cyclic testing, the maximum output current of the device decreased by approximately 4.3%, and the maximum shift in the transfer curve was 0.12V. At low temperatures, the device also exhibited relatively good stability, with a maximum shift in the transfer curve of 0.2V.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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