High-temperature annealing of ( ) β-Ga2O3 substrates for reducing structural defects after diamond sawing
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-12-01 |
| Journal | Journal of Semiconductors |
| Authors | P. N. Butenko, Michael Boiko, Mikhail Sharkov, А. V. Аlmaev, A. A. Kitsay |
| Citations | 4 |
Abstract
Section titled “Abstract”Abstract A commercial epi-ready ( ) β -Ga 2 O 3 wafer was investigated upon diamond sawing into pieces measuring 2.5 × 3 mm 2 . The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique. The density of defects was estimated from the average value of etch pits calculated, including near-edge regions, and was obtained close to 10 9 cm −2 . Blocks with lattice orientation deviated by angles of 1−3 arcmin, as well as non-stoichiometric fractions with a relative strain about (1.0−1.5) × 10 −4 in the [ ] direction, were found. Crystal perfection was shown to decrease significantly towards the cutting lines of the samples. To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility, the thermal annealing was employed. Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100 °C was observed. The fractions characterized by non-stoichiometry phases and the block deviation disappeared. The annealing for 11 h improved the homogeneity and perfection in the crystals. The average density of the etch pits dropped down significantly to 8 × 10 6 cm −2 .
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2018 - A review of Ga2O3 materials, processing, and devices [Crossref]
- 2016 - Gallium oxide: properties and applications− a review
- 2022 - Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear [Crossref]
- 2018 - Nanogrinding induced surface and deformation mechanism of single crystal β-Ga2O3 [Crossref]
- 2018 - Effect of OH− on chemical mechanical polishing of β-Ga2O3 (100) substrate using an alkaline slurry [Crossref]
- 2017 - Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects [Crossref]
- 2017 - Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on (-201) β-Ga2O3 [Crossref]
- 1953 - X-ray line broadening from filed aluminium and wolfram [Crossref]
- 2015 - Investigation of the atomic, crystal, and domain structures of materials based on X-ray diffraction and absorption data: A review [Crossref]
- 2020 - Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy [Crossref]