Origin of the near-room temperature resistance transition in lutetium with H2/N2 gas mixture under high pressure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-12-30 |
| Journal | National Science Review |
| Authors | Di Peng, Qiaoshi Zeng, Fujun Lan, Zhenfang Xing, Zhidan Zeng |
| Institutions | Beijing University of Technology, Shanghai Advanced Research Institute |
| Citations | 7 |
Abstract
Section titled āAbstractāABSTRACT The recent report of room-temperature superconductivity at near-ambient pressure in nitrogen-doped lutetium hydride (Lu-H-N) by Dasenbrock-Gammon et al. [Nature 615, 244-250 (2023)] has attracted tremendous attention due to its anticipated great impact on technology. However, the results could not be independently reproduced by other groups worldwide in follow-up studies, which elicited intense controversy. Here, we develop a reliable experimental protocol to minimize the extensively concerned extrinsic influences on the sample by starting the reaction from pure lutetium loaded with an H2/N2 gas mixture in a diamond anvil cell under different pressures and temperatures and simultaneously monitoring the entire chemical reaction process using in situ four-probe resistance measurements. Therefore, we could repeatedly reproduce the near-room temperature upsurge of electrical resistance at a relatively early stage of the chemical reaction. However, the mechanism is suggested to be a metal-to-semiconductor/insulator transition associated with the structural modulation in the non-stoichiometric Lu-H-N, rather than superconductivity.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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