Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-12-09 |
| Authors | Hiroshi Kawarada, Kosuke Ota, Yu Fu, Ayumi Narita, Xiaohua Zhu |
| Institutions | Waseda University |
| Citations | 4 |
Abstract
Section titled “Abstract”Oxidized silicon terminated (C-Si-O) diamond surface has been applied for lateral and vertical MOSFETs. C-Si-O bonds instead of C-O-Si bonds are key to fabricate higher channel mobility of diamond p channel MOSFETs (p-MOSFETs). The hole channel mobility exceeds 150 cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> V <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-1</sup> s <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-1</sup> which is higher than the electron mobility of SiC n-MOSFETs. The threshold voltage V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>TH</inf> of diamond p-MOSFET is negatively large enough (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>TH</inf> < -3V) for normally-off operation at high voltage circuits. Maximum drain current densities I <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>D,Max</inf> were >300 mAmm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-1</sup> in lateral FETs and >200 mAmm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-1</sup> in vertical FETs. They are the highest in normally-off operation of diamond p-FETs.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1996 - Surf. Sci. Rep
- 2017 - Sci. Reports