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6CCVD Research

Optimizing Fermi Level Engineering for Single Neutral Silicon Vacancy Centers in Diamond

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2024-01-01
AuthorsArunava Das, Sounak Mukherjee, Zi-Huai Zhang, Andrew M. Edmonds, Nicola Palmer

Abstract

Section titled ā€œAbstractā€

We use Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy to characterize boron and nitrogen concentrations needed for the stabilization of neutral silicon vacancy centers (SiV 0 ) in Si-implanted diamonds co-doped with boron and nitrogen.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2022 - Engineering quantum defects in diamond for quantum networks.
  2. 2010 - Identification of point defects in treated single crystal diamonds

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