Annealing-induced evolution of boron-doped polycrystalline diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-04-12 |
| Journal | Physical Review Materials |
| Authors | Gufei Zhang, Ramiz Zulkharnay, Fabian Ganss, YĆ¼jie Guo, Mohammed A. Alkhalifah |
| Institutions | Helmholtz-Zentrum Dresden-Rossendorf, Central South University |
| Citations | 3 |
Abstract
Section titled āAbstractāDiamond shows great promise for opening up new paradigms in the semiconductor industry and quantum electronics. Here, we investigate the influence of thermal annealing on the structural and electrical transport properties of heavily boron-doped polycrystalline diamond (BPD) thin films. Our structural analyses show that annealing beyond 600āC can induce severe local amorphization in a BPD thin film and transform it into a binary mixture of spatially separate domains of amorphous carbon (a-C) and diamond grains. Due to this annealing-induced morphology and phase segregation, the BPD thin films demonstrate a significant decrease of the electron localization radius and a distinct increase of the Ginzburg-Landau coherence length. Our research provides physical insight into the conversion of diamond to a-C and aids in defining the application scope of BPD by revealing its heat tolerance.