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6CCVD Research

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2024-04-01
JournalJournal of Semiconductors
AuthorsFei Sun, Yi Peng, Guoqiang Zhao, Xiancheng Wang, Zheng Deng
Citations1

Abstract

Section titled ā€œAbstractā€

Abstract Applying pressure has been evidenced as an effective method to control the properties of semiconductors, owing to its capability to modify the band configuration around Fermi energy. Correspondingly, structural evolutions under external pressures are required to analyze the mechanisms. Herein high-pressure structure of a magnetic doped semiconductor Ba(Zn 0.95 Mn 0.05 ) 2 As 2 is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil cells. The materials become ferromagnetic with Curie temperature of 105 K after further 20% K doping. The title material undergoes an isostructural phase transition at around 19 GPa. Below the transition pressure, it is remarkable to find lengthening of Zn/Mnāˆ’As bond within Zn/MnAs layers, since chemical bonds are generally shortened with applying pressures. Accompanied with the bond stretch, interlayer Asāˆ’As distances become shorter and the Asāˆ’As dimers form after the phase transition. With further compression, Zn/Mnāˆ’As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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