Electrical Properties of Epoxy-Nano Diamond Composite Films for Microelectronics Packaging Applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-05-08 |
| Authors | Erick M. Spory, T. S. Kalkur |
| Institutions | University of Colorado Colorado Springs |
Abstract
Section titled āAbstractāDue to commercial demand for higher transistor densities and more output power needed for transportation electrification, thermal conductivity of die attach and encapsulating material are becoming an essential concern with respect to IC packaging architectures. In this paper we are presenting the electrical properties of epoxy-diamond composite in order to use them as encapsulant material for front side heat removal from power devices and very large scale integrated circuits(VLSI). The low frequency capacitance studies show that the dielectric constant of the epoxy was found to decrease with increase in frequency from 10KHz to 1MHz. At 100kHz, the dielectric constant of epoxy was found to be 4.51 and for epoxydiamond composite the dielectric constant was 4.56. The dissipation factor for both films were found to be temperature dependent and the maximum dissipation was 0.035. High frequency characterization with network analyzer shows that both films show a dissipation factor of less than 0.05 up to 1.5 GHz. The current vs voltage measurements show that the leakage current increases with increase in temperature for both the samples.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2001 - Fundamentals of Microsystems Packaging