Photoluminescence studies of the charge states of nitrogen vacancy centers in diamond after arsenic ion implantation and subsequent annealing
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-05-17 |
| Journal | Journal of Applied Physics |
| Authors | Chenyang Huangfu, Yu-Fei Zhang, Jinchen Hao, Gangyuan Jia, Haitao Wu |
| Institutions | Taiyuan University of Science and Technology, Xiāan Jiaotong University |
Abstract
Section titled āAbstractāIn this work, nitrogen vacancy (NV) centers of high nitrogen diamond implanted with arsenic ions were investigated by photoluminescence spectroscopy. The transition of the NV center charge state was discussed by the regularly changing laser excitation power and measurement temperature following high-temperature annealing. After high-temperature annealing, the amorphous layer generated by arsenic ion implantation is transformed into a graphitization layer, resulting in a decrease in the NV yield. The electric neutral NV (NV0) center and negatively charged NV (NVā) center are affected by both radiation recombination and Auger recombination with increasing laser power. Accompanied by the increasing measurement temperature, the intensities of NV centers gradually decreased and eventually quenched. In addition, the charge states of NVā and NV0 centers were undergoing a transition. The zero phonon line positions of NV centers were also red shift, it was attributed to the dominant role of electron-phonon interaction in the temperature-dependent displacement of diamond energy gaps. The full width at half maxima of NV center were broadened significantly at higher temperatures.