Temperature Response and Power Dissipation in GaN HEMT on Diamond Substrate
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-05-02 |
| Authors | Imdad Ahmed Jaman, Tofayel Karim, Md. Asifur Rahman, Md. Omar Faruk Azad, Anwar Jarndal |
| Institutions | University of Chittagong, University of Sharjah |
Abstract
Section titled “Abstract”This work focuses on the evaluation of power dissipation on Diamond substrate materials for high electron mobility transistors (HEMTs) based on gallium nitride, with particular attention to temperature effects. The estimation of the channel temperature is accomplished through the analysis of measurement data, which is further extended to consider substrate thermal resistance and conductivity. The research comprises a comparative examination of power dissipation using three different methods for gallium nitride HEMTs on a Diamond substrate. The thermal resistance <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$(\mathbf{R}_{\mathbf{th}})$</tex> of the device is estimated to be <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$14.6\mathbf{K}.\mathbf{mm}.\mathbf{W}^{-1}$</tex> and and 19.3K.mm. <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\mathbf{W}$</tex> <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-1</sup> at <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\mathbf{T}_{\mathbf{a}}$</tex> of <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$298\mathbf{K}$</tex> and 16.1 K.mm. <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\mathbf{W}^{-1},20.8\mathbf{K}.\mathbf{mm}.\mathbf{W}^{-}$</tex> <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>1</sup> and <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$19.9\mathbf{K}.\mathbf{mm}.\mathbf{W}^{-1}$</tex> at <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$\mathbf{T}_{\mathbf{a}}$</tex> of <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$358\mathrm{K}$</tex> using the three respective methods using measured data. The thermal resistance exhibits an increase with temperature, in accordance with the findings in the current literature.