Thermal management and switching performance of β-Ga2O3 vertical FinFET with diamond-gate structure
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-05-13 |
| Journal | Semiconductor Science and Technology |
| Authors | Yehong Li, Xuefeng Zheng, Fang Zhang, Yunlong He, Zijian Yuan |
| Institutions | Xidian University |
| Citations | 5 |
Abstract
Section titled “Abstract”Abstract In this paper, a beta-phase gallium oxide ( β -Ga 2 O 3 ) vertical FinFET with diamond-gate has been studied by Silvaco-ATLAS simulation. The diamond-gate structure achieves adjustable pin (p-insulator-n) junction owing to the diamond-SiO 2 -Ga 2 O 3 heterostructure. This design also enhances heat dissipation by virtue of the high thermal conductivity of the diamond. Compared to conventional FinFETs, the diamond-gate FinFET (DG-FinFET) reduces the static operating temperature rise by around 17.30%. Additionally, due to its greater heat dissipation capacity, DG-FinFETs provide a 5.84% increase in current density at 1 kA cm −2 current density level. The structural changes in the diamond-gate also result in a significant reduction in the gate-source capacitance ( C GS ). At 1 MHz operating frequency and the same gate voltage, DG-FinFETs have 69.29% less gate-source charge ( Q GS ), 70.80% less charge/discharge delay time, 73.70% less switching loss, and 57.15% less conduction loss. Overall, the simulation and analysis presented in this work indicate a promising advancement of the DG-FinFET structure in high-power and rapid switching applications.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2016 - Recent progress in Ga2O3 power devices [Crossref]
- 2021 - Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review [Crossref]
- 2018 - HCl flow-induced phase change of α-, β-, and ϵ-Ga2O3 films grown by MOCVD [Crossref]
- 2020 - Substrate-orientation dependence of β-Ga2O3 (100),(010),(001), and (2¯ 01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) [Crossref]
- 2018 - Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties [Crossref]
- 2020 - Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications [Crossref]
- 2016 - High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth [Crossref]
- 2013 - Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics [Crossref]
- 2018 - 1.85 kV breakdown voltage in lateral field-plated Ga2O3 MOSFETs [Crossref]
- 2020 - Lateral β-Ga2O3 MOSFETs with high power figure of merit of 277 MW/cm2 [Crossref]