Skip to content
6CCVD Research

Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond - a CL-EELS study

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2024-07-15
JournalNanotechnology
AuthorsJ. Valendolf, José Carlos Piñero Charlo, Fernando Lloret, Gonzalo Alba, David Eon
InstitutionsCentre National de la Recherche Scientifique, Institut polytechnique de Grenoble

Abstract

Section titled “Abstract”

Abstract Due to its capacity to achieve nanometre-scale machining and lithography, a focused ion beam (FIB) is an extended tool for semiconductor device fabrication and development, in particular, for diamond-based devices. However, some technological steps are still not fully optimized for its use. Indeed, ion implantation seems to affect the crystalline structure and electrical properties of diamond. For this study, a boron-doped ([B] ∌ 10 17 atoms·cm −3 ) diamond layer grown by chemical vapour deposition was irradiated using Ga + by FIB, with 1 nA current and 5, 20, and 30 keV of acceleration voltage. The Ga + implanted diamond layer has been analysed through cathodoluminescence (CL) and scanning transmission electron microscopy (STEM)-related techniques. The beam penetration depth has been simulated by Monte Carlo calculations of both Ga + (FIB) and e − (CL) beams at different energies. The comparative CL analysis of the layer as-grown and after implantation revealed peaks related to defects, such as A band, H3 centre, and defects present in the green band region. The STEM studies for the 30 keV implanted sample showed that the diamond lattice is affected by the damage, evidencing amorphisation in the layer with a sp 2 /sp 3 ratio of 1.37, estimated by electron energy loss spectroscopy. Therefore, this study highlights the effects of the Ga + implantation on the optical and structural characteristics of diamond, using different methods.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2010 - Extreme dielectric strength in boron doped homoepitaxial diamond [Crossref]
  2. 2005 - Diamond power devices. Concepts and limits [Crossref]
  3. 2013 - The effect of gallium implantation on the optical properties of diamond [Crossref]
  4. 2011 - Focused ion beam implantation of diamond [Crossref]
  5. 2023 - Atomic-scale observation and prediction of gallium ion implantation induced amorphization on natural diamond surface [Crossref]
  6. 2024 - Fabrication of thin diamond membranes by Ne+ implantation [Crossref]
  7. 2016 - Review on FIB-induced damage in diamond materials [Crossref]
  8. 2011 - Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis [Crossref]
  9. 1993 - Excitonic recombination radiation in undoped and boron-doped chemical-vapor-deposited diamonds [Crossref]

Reads Similar to This

Magnetic domains and domain wall pinning in atomically thin CrBr3 revealed by nanoscale imaging Highly Occupied Surface States at Deuterium‐Grown Boron‐Doped Diamond Interfaces for Efficient Photoelectrochemistry Fixed charges investigation in Al2O3/hydrogenated-diamond metal-oxide-semiconductor capacitors