Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-12-01 |
| Authors | Yu Fu, Yuehang Xu, Ruimin Xu, Jianjun Zhou, Yuechan Kong |
| Institutions | University of Electronic Science and Technology of China |
| Citations | 6 |
Abstract
Section titled āAbstractāA diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias V <sub xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>GS</sub> of -4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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