Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-08-26 |
| Journal | Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena |
| Authors | Niloy Chandra Saha, Tomoki Shiratsuchi, Masanori Eguchi, Toshiyuki Oishi, Makoto Kasu |
| Institutions | Saga University, National Institute of Technology, Kure College |
| Citations | 1 |
Abstract
Section titled āAbstractāDiamond metal-oxide-semiconductor field-effect transistor (MOSFET) exhibited durable and stable dynamic switching characteristics at an unprecedentedly high voltage of ā105 V. Switching turn-on and turn-off times were measured to be 7.64 and 4.93 ns, respectively, with a corresponding total switching loss of 20.03 pJ for a load resistance of 50 Ī©. No Miller effect was observed due to the low Miller capacitance of 11 pF/mm. This study suggests the potentiality of diamond MOSFETs in prospective high-voltage, high-speed applications.