Investigation of PCVSi − defect in 4H–SiC as a candidate for a qubit
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-09-26 |
| Journal | Journal of Physics D Applied Physics |
| Authors | Lei Sun, Wenxu Zhang, Bin Peng, Wanli Zhang |
| Citations | 1 |
Abstract
Section titled “Abstract”Abstract Exploration of spin defects in semiconductors for possible qubits encourages the development of the quantum field. Silicon carbide (SiC) is a suitable platform to carry spin defects, due to its excellent electrical, mechanical and optical properties, together with its convenience for crystallographic growth and doping processes. In this study, a negatively charged phosphorus-vacancy (P C V Si − ) defect, consisting of a silicon vacancy and nearby substitution of a phosphorus atom to a carbon atom in 4H-SiC, is investigated by first-principles calculations. This defect is demonstrated to possess a high spin ( S = 1) with relatively low formation energy. Computed zero-phonon line energy and zero-field splitting parameters of this defect are close to those of neutral divacancy (V C V Si 0 ), negatively charged nitrogen-vacancy center (N C V Si − ) and some other color centers, which indicate a similarity of both optical and spin properties among them. Moreover, the electron spin coherence time of this defect turns out to be 1.15-1.40 ms. Such a long coherence time provides the defect with reliability for quantum information processing. Our results show that the P C V Si − defect can be a promising candidate for a qubit.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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