Skip to content
6CCVD Research

The Influence of Annealing Temperature on the Interfacial Heat Transfer in Pulsed Laser Deposition-Grown Ga2O3 on Diamond Composite Substrates

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2024-09-04
JournalC – Journal of Carbon Research
AuthorsLin Gu, Yi Shen, Wenjie Chen, Yuanhui Zuo, Hong-Ping Ma
InstitutionsFudan University, Ningbo University
Citations2

Abstract

Section titled “Abstract”

As devices become more miniaturized and integrated, the heat flux density has increased, highlighting the issue of heat concentration, especially for low thermal conductivity gallium oxide (Ga2O3). This study utilizes diamond composite substrates with an AlN transition layer to assist Ga2O3 in rapid thermal dissipation. All samples were prepared using pulsed laser deposition (PLD) and annealed at 600-1000 °C. The microstructure, surface morphology, vacancy defects, and thermal characteristics of post-annealed Ga2O3 were then thoroughly investigated to determine the mechanism by which annealing temperature influences the heat transfer of heterostructures. The results demonstrate that increasing the annealing temperature can improve the crystallinity of Ga2O3 while also reducing oxygen vacancy defects from 20.6% to 9.9%. As the temperature rises to 1000 °C, the thermal conductivity of Ga2O3 reaches a maximum of 12.25 W/(m¡K). However, the interface microstructure has no direct correlation with annealing temperature. At 700 °C, Ga2O3/diamond exhibits a maximum thermal boundary conductance of 127.06 MW/(m2¡K). Higher temperatures (>800 °C) cause irregular mixtures to form near the heterointerface, intensifying phonon interface scattering and sharply deteriorating interfacial heat transfer. These findings contribute to a better understanding of the heterointerface thermal transfer influence mechanism and provide theoretical guidance for the thermal management design and physical analysis of Ga2O3-based power devices.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2021 - Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC [Crossref]
  2. 2017 - High quality crystal growth and anisotropic physical characterization of β-Ga2O3 single crystals grown by EFG method [Crossref]
  3. 2023 - Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0-0.35) grown by the Czochralski method [Crossref]
  4. 2024 - Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices [Crossref]
  5. 2012 - Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [Crossref]
  6. 2018 - 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs [Crossref]
  7. 2016 - 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped Ga2O3 MOSFETs [Crossref]
  8. 2021 - Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2 [Crossref]
  9. 2013 - Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics [Crossref]
  10. 2019 - Enhancement-Mode β-Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing [Crossref]

Reads Similar to This

Enhancing the Photodegradation Property of NO through the Construction of a SrTiO3/GQDs/NH2-UiO-66 Heterojunction Room temperature “optical nanodiamond hyperpolarizer” - Physics, design, and operation Creation of shallow nitrogen vacancy centers in HPHT diamond surface via catalytic etching of transition metal