Coherence of NV defects in isotopically enriched 6H-28SiC at ambient conditions
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-11-11 |
| Journal | Applied Physics Letters |
| Authors | Fadis F. Murzakhanov, G. V. Mamin, Margarita A. Sadovnikova, E. N. Mokhov, S. S. Nagalyuk |
| Institutions | Kazan Federal University, Ioffe Institute |
| Citations | 2 |
Abstract
Section titled āAbstractāThe unique spin-optical properties of NV defects in SiC, coupled with silicon carbideās advanced technology compared to diamond, make them a promising candidate for quantum technology applications. In this study, using photoinduced pulse ESR at 94 GHz (3.4 T), we reveal the room temperature spin coherence of NV defects in 6H-28SiC, purified to reduce 29Si concentration to ā1%, four times below its natural level. We demonstrate room temperature (300 K) Hahn-echo coherence time T2 = 23.6 μs, spin-lattice relaxation time T1 = 0.1 ms, and coherent control over optically polarized NV spin states through Rabi nutation experiments. We reveal long inhomogeneous dephasing time T2* = 1.5 μs, which is about five times greater than that measured for NV defects in SiC with natural isotopic content. Our observations highlight again the potential of NV defects in 6H-28SiC, which exhibit near-infrared optical excitation and emission properties compatible with O-band fiber optics, as promising candidates for applications in quantum sensing, communication, and computation.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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