Ultralow Threshold Voltage Responding Synaptic Memristor Device Based on CuxO and Diamond Schottky Junction
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2024-11-14 |
| Journal | physica status solidi (a) |
| Authors | P. Liu, Tian Shao, Qiao Chen, Andy H. Shen |
| Institutions | China University of Geosciences |
Abstract
Section titled âAbstractâHerein, an ultralowâthreshold voltageâresponsive synaptic memristor based on Cu x O and Bâdoped diamond (BDD) heterojunctions is developed. The aggregation of oxygen vacancies corresponding to the highâ and lowâresistance states forms the foundation for the hysteresis behavior. The I - V curves exhibit impressive analog resistive switching (analog RS), which renders the memristor highly suitable for simulating synaptic stimulation. The reliable stability of this structure is confirmed using 122 individual devices, achieving a yield of 90.2% with highly consistent I - V curves. In addition, the effect of the Bâdopant level in the diamond is investigated. By reducing the B/C ratio of the precursor from 1:500 to 1:2000 during the hot filament chemical vapor deposition synthesis process, a significant 55.3% reduction in current is achieved, leading to lower energy consumption. The Schottky barrier height increases with decreasing Bâdopant levels, providing a broader adjustable range for synaptic weight renewal. Remarkably, when the pulse amplitude is decreased to an ultralow value of 3 mV, the synaptic function of the device remains observable, with an energy consumption of only 9.5 Ă 10 â11 J. To the best of the authorsâ knowledge, this is the first report of such a lowâamplitude pulse voltage in a twoâterminal memristor.