Diamond-defect engineering of NV− centers using ion beam irradiation
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-12-02 |
| Journal | Diamond and Related Materials |
| Authors | J. L. Sánchez Toural, J. Saúl García‐Pérez, Ramón Bernardo Gavito, Daniel Granados, A. Andrino-Gómez |
Abstract
Section titled “Abstract”The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV ) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach employing both light (H+) and heavy (Br+6) ions was followed to assess their respective impacts on the creation of NV centers, using different ion energies or fluences to generate varying amounts of vacancies. Photoluminescence spectroscopy was applied to characterize NV and neutral NV0 centers. Initially, no NV centers were detected post-irradiation, despite the presence of substitutional nitrogen and vacancies. However, after annealing at 800 º C (and in some cases at 900 º C), most samples exhibited a high density of NV0 and especially NV centers. This demonstrates that thermal treatment is essential for vacancy‑nitrogen recombination and NV formation, often through electron capture from nearby nitrogen atoms. Notably, we achieved high NV densities without graphitization, which is essential for preserving the material’s properties for quantum applications. This study underscores and quantifies the effectiveness of MeV-range ions in controlling vacancy distributions and highlights their potential for optimizing NV center formation to enhance the sensitivity of diamond-based quantum magnetic sensors
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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