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6CCVD Research

Accurate operando measurement of AlGaN/GaN HEMTs channel temperature and optimization of thermal design

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-01-29
JournalNanotechnology
AuthorsRuihua An, Jinyan Zhao, Shijie Zhai, Junlin Yang, Jinghong Li
InstitutionsXiā€™an Jiaotong University, Beijing Microelectronics Technology Institute

Abstract

Section titled ā€œAbstractā€

Abstract The accurate estimation of the temperature distribution of the GaN based power devices and optimization of the device structure is of great significance to possibly solve the self-heating problem, which hinders the further enhancement of the device performances. We present here the operando temperature measurement with high spatial resolution using Raman spectroscopy of AlGaN/GaN high electron mobility transistors (HEMTs) with different device structures and explore the optimization of the device thermal design accordingly. The lateral and depth temperature distributions of the single-finger HEMT were characterized. The channel temperature and self-heating effect of the device under different bias voltages were investigated. By incorporating the two-dimensional electrothermal simulation, the hotspot position can be clearly observed under the gate edge near the drain side. The channel temperature of the multi-finger HEMT was further measured and the experiment results were in agreement with the three-dimensional finite element analysis simulation results. The device structure of the multi-finger device, including the gate width, gate pitch, structure layout, substrate materials, and thickness, were then theoretically optimized to improve the heat dissipation. The peak channel temperature of the device can be reduced by 70 Ā°C when the substrate is substituted from silicon carbide to a single crystalline diamond. These results are of great interest for the thermal management of GaN HEMT power devices and further device performance improvement.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  4. 2021 - Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology [Crossref]
  5. 2021 - Thermal design rules of AlGaN/GaN-based microwave transistors on diamond [Crossref]
  6. 2022 - Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-Raman thermometers [Crossref]
  7. 2023 - High thermal stability and low thermal resistance of large area GaN/3Cā€SiC/diamond junctions for practical device processes [Crossref]
  8. 2021 - Accurate determination of the peak channel temperature by an electrical method combined with EL mapping technique in In0.17Al0.83N/GaN HEMTs [Crossref]
  9. 2016 - A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution [Crossref]
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