High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-01-13 |
| Journal | Applied Physics Letters |
| Authors | Dan Zhao, Zhangcheng Liu, Wenqian Wang, Zhiwei Chen, Qin Lu |
| Institutions | Jiangnan University, Xiāan University of Posts and Telecommunications |
| Citations | 11 |
Abstract
Section titled āAbstractāA metal/n-Ga2O3/p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond was lightly boron doped, and the Ga2O3 film was grown via atomic layer deposition without intentional doping. The forward current density increased with temperature, while the reverse current decreased at elevated temperatures. This behavior was attributed to the distinct carrier ionization dynamics across varying temperature ranges. Under high reverse voltage stress, the reverse current remained relatively stable, with no breakdown occurring up to 498 K. An avalanche breakdown voltage of 186 V at 498 K indicates the diodeās robust high-voltage endurance capability. These findings underscore the potential of the metal/n-Ga2O3/p-diamond heterojunction diode for high-temperature and high-voltage applications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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