kV-class vertical p-n heterojunction rectifier based on ITO/diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-01-27 |
| Journal | Applied Physics Letters |
| Authors | Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, F. Ren, S. J. Pearton |
| Institutions | University of Florida |
| Citations | 1 |
Abstract
Section titled āAbstractāIndium tin oxide (ITO) layers were sputter-deposited onto commercially available vertical p/p+ diamond structures consisting of 5 μm thick p-type (1.3 Ć 1016 cmā3) drift layers deposited by chemical vapor deposition on 250 μm thick heavily B-doped (3 Ć 1020 cmā3) single crystal substrates. The ITO is found to form a type II band alignment allowing Ohmic contact to the p-type diamond and creating a vertical n-p heterojunction. The maximum reverse breakdown of heterojunction rectifiers was ā¼1.1 kV, with an on-resistance (RON) of 13 m⦠· cm2, leading to a power figure of merit of 99.3 MW/cm2. The on-voltage was 1.4 V, diode ideality factor was 1.22, with a reverse recovery time of 9.5 ns for 100 μm diameter rectifiers. The on/off ratios when switching from ā5 V forward to 100 V reverse were in the range of 1011-1012. This is a simple approach for realizing high performance vertical diamond-based rectifiers for power switching applications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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