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6CCVD Research

An enhancement-mode C-H diamond FET with low work function gate material gadolinia

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-03-31
JournalApplied Physics Letters
AuthorsMinghui Zhang, Lin Fang, Wei Wang, Mingchen Zhang, Qi Qi
InstitutionsHebei Semiconductor Research Institute, Xiā€™an Jiaotong University

Abstract

Section titled ā€œAbstractā€

Enhancement-mode hydrogen-terminated diamond (C-H diamond) field effect transistors (FETs) are strongly desirable for safety protection, energy saving, etc., and low work function gate material is an effective and convenient way to deplete the two-dimensional hole gas and realize the enhancement-mode. In this article, we demonstrate a C-H diamond FET with low work function gadolinia (Gd2O3) gate materials. For the 4 Ī¼m gate length (LG) Gd2O3 C-H diamond FET, the device demonstrates an obvious enhancement-mode with a threshold voltage of āˆ’1.3 V. Besides, the maximum source/drain current density and the leakage current density are āˆ’80.0 mA/mm and 1.6 Ɨ 10āˆ’6 A/cm2 at a gate voltage of āˆ’7 V, respectively. Moreover, the device demonstrates a saturation carrier mobility of 437.3 cm2/V Ā· s. Accordingly, this enhancement-mode C-H diamond Gd2O3 FET demonstrates high performance with relatively high source/drain current density and low leakage current density, which will provide a strategy for the development of enhancement-mode C-H diamond FETs significantly.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2008 - Physica Status Solidi (C) Current Topics in Solid State Physics

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