Skip to content

Homogeneous spin-dephasing time of NV− centre in millimetre-scale 12C-enriched high-pressure high-temperature diamond crystals

MetadataDetails
Publication Date2025-04-08
JournalCommunications Materials
AuthorsChikara Shinei, Y. MASUYAMA, Hiroshi Abe, Masashi Miyakawa, Takashi Taniguchi
AnalysisFull AI Review Included

This research demonstrates the successful synthesis of highly uniform, millimetre-scale 12C-enriched High-Pressure High-Temperature (HPHT) diamond crystals, achieving critical specifications necessary for next-generation quantum magnetometers.

  • Core Achievement: Exceptional spatial uniformity of the NV center spin-dephasing time (T2*) was achieved, showing a variance of only 10% over a large 1.1 x 1.1 mm2 area.
  • Performance Metric: The median T2* value (<T2*>) reached 4.5 µs in the 12C-enriched HPHT diamond with a low nitrogen concentration (1.3 ± 0.4 ppm).
  • Limiting Factor Identified: The T2* performance is primarily limited by the residual strain gradient within the HPHT crystal, not the electron-spin bath of nitrogen impurities. The measured T2* (4.5 µs) is approximately 2/3 of the theoretical limit imposed by the nitrogen bath (7.6 µs).
  • Strain Quantification: The strain gradient was quantified by mapping the spin-strain interaction (Mz), yielding a full width at half maximum (FWHM) of 0.06 MHz.
  • Pathway to Femto-tesla Sensitivity: Achieving the target T2* > 10 µs—essential for high-fidelity spin manipulation (100 ns π pulse) and femto-tesla magnetic sensitivity (<1 pT Hz-1/2)—requires further reduction of this internal strain gradient.
  • Synthesis Method: High crystal quality was maintained by using a low HPHT growth rate (~1 mg h-1) and precise nitrogen concentration control.
ParameterValueUnitContext
Median Spin Dephasing Time (<T2*>)4.5µsMeasured in 12C-enriched HPHT diamond.
T2* Spatial Variance10%Over 1.1 x 1.1 mm2 area in the {111} growth sector.
Target T2* for High Sensitivity> 10µsRequired for 10 fT human magnetoencephalography (MEG).
Nitrogen Concentration ([Ns0]initial)1.3 ± 0.4ppmIn the examined HPHT diamond sample.
Excitation Volume (Mapped Area)1.1 x 1.1mm2Spatial mapping region.
Crystal Thickness (Excited Depth)400µmDepth of the {111} growth sector examined.
Spin-Strain Interaction (ΔMz FWHM)0.06MHzQuantifies the spatial dispersion of strain.
Estimated Strain Gradient Slope0.05kHz µm-1Calculated from ΔMz over the mapped distance.
HPHT Synthesis Pressure5.5GPaGrowth pressure.
HPHT Synthesis Temperature1300-1350°CGrowth temperature range.
HPHT Growth Rate~1mg h-1Low rate used to suppress metal inclusions and strain.
Theoretical T2* Limit (Nitrogen DDI)7.6 ± 0.9µsCalculated based on the nitrogen concentration (1.3 ppm).
Target Magnetic Sensitivity (MEG)< 10fTRequired for human magnetoencephalography.
Spin π-Rotation Time~100nsTypical time achieved in this study.

The study combined specialized HPHT synthesis techniques with high-resolution optical and microwave measurements to characterize the NV center ensemble properties.

  1. HPHT Crystal Synthesis:

    • Apparatus: Modified belt-type high-pressure apparatus with cooling water for temperature stabilization (fluctuation less than ± 7.5 °C).
    • Source Material: 12C isotopically enriched CVD polycrystalline diamond was used as the carbon source (assumed 13C concentration ~50 ppm).
    • Growth Conditions: Crystals were grown at 5.5 GPa and 1300-1350 °C for 40-80 hours, maintaining a low growth rate (~1 mg h-1) to minimize structural defects and metal inclusions.
    • Doping Control: Nitrogen concentration (1.3 ± 0.4 ppm) was controlled by adding nitrogen-getter metals (Ti or Al) to the Fe-Co-Cu or Fe-Co-Al solvent.
  2. NV Center Formation:

    • NV centers were created via electron-beam irradiation (1 x 1017 to 5 x 1017 e cm-2 fluence) followed by post-annealing at 1000 °C for 2 hours.
    • The maximum conversion efficiency ([NV-]/[Ns0]initial) achieved was approximately 20%.
  3. Sample Preparation and Orientation:

    • Synthesized diamonds were laser-cut parallel to the {111} plane, which is the preferred orientation for NV sensing systems due to easier alignment of the external magnetic field with the NV axis.
    • Acid treatment (H2SO4:HNO3) was used post-cutting to remove paramagnetic amorphous carbon defects from the surface.
  4. T2 Spatial Mapping:*

    • Excitation: A columnar excitation fluorescence microscope was used to excite the NV ensemble throughout the crystal thickness (400 µm depth) with a 20 µm diameter laser spot.
    • Measurement: Free-Induction Decay (FID) measurements were conducted at 100 µm steps across the 1.1 x 1.1 mm2 region in the {111} growth sector.
    • Field Alignment: An external magnetic field (2.5 mT) was applied parallel to the [111] NV center axis to maximize spin coherence.
  5. Strain Gradient Measurement (Mz Mapping):

    • Optically Detected Magnetic Resonance (ODMR) measurements were performed at each excited position to determine the resonance frequency shift (Mz), which corresponds to the local strain interaction.
    • The spatial dispersion of Mz (ΔMz) was used to quantify the strain gradient limiting T2*.

The development of millimetre-scale, highly uniform, low-strain diamond crystals is crucial for scaling up quantum technologies from laboratory experiments to practical commercial devices.

  • Quantum Sensing and Metrology:

    • Femto-tesla Magnetometry: Enabling high-sensitivity detection of extremely weak magnetic fields, necessary for advanced applications.
    • Biomagnetism: Realization of human Magnetoencephalography (MEG) and Magnetocardiography (MCG) under ambient conditions, requiring sensitivity <10 fT.
    • Electric Vehicle (EV) Battery Monitoring: High-resolution monitoring of current and temperature in EV batteries using compact diamond sensors.
  • Quantum Information Technology:

    • Quantum Computation: The long and uniform T2* is essential for maintaining stable quantum superposition states (QSS) and performing high-fidelity spin rotation operations.
    • Quantum Telecommunication: Utilizing single NV centers with stable quantum states for robust quantum communication protocols.
  • Advanced Material Science:

    • High-Quality Substrates: Providing large-area, low-defect, isotopically pure 12C diamond substrates for various electronic and optical applications where strain must be minimized.
View Original Abstract

Abstract Negatively charged nitrogen vacancy (NV−) centres in diamond crystals are promising colour centres for high-sensitivity quantum sensors. A long dephasing time (T 2 * > 10 μs) is essential for achieving increased sensitivity and higher uniformity of T 2 * in millimetre-scale diamond is strongly desired for femto-tesla weak magnetic field detection. High uniformity of T 2 * for NV− centres is achieved herein. The median value of T 2 *, <T 2 *>, in the 12C-enriched high-pressure, high-temperature (HPHT) grown diamond with a nitrogen concentration of 1.3 ± 0.4 ppm is 4.5 μs. The variance of T 2 * is only 10% over a millimetre-scale region (1.1 × 1.1 mm2) within the 0.4 mm thick {111} growth sector. <T 2 *> is ~2/3 times the value limited by the dipole-dipole interaction from the electron-spin bath of nitrogen impurities, suggesting that the residual strain gradient in the HPHT diamond crystal partially limits T 2 *. Reducing the strain gradient in diamond crystals provide a pathway to achievement of high sensitivity magnetometry using NV quantum sensing.