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6CCVD Research

Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2025-04-01
JournalApplied Physics Express
AuthorsRohith Soman, Mohamadali Malakoutian, Jeong-kyu Kim, Emre Akso, Nirupam Hatui
Citations5

Abstract

Section titled ā€œAbstractā€

Abstract We report the successful integration of low-temperature polycrystalline all-around diamond as heat spreaders with 150 nm gate length N-polar GaN MISHEMT platform to improve power efficiencies for X-band applications. With an all-around integration scheme, the CVD-grown diamond reduces channelā€™s peak temperature, improving device performance and reliability. A combination of optimized low-temperature diamond growth at 500 Ā°C with the thermally stable molybdenum gate metal and MOCVD-grown SiN x gate-dielectric was utilized for the successful integration. The fabricated device exhibited a I DSS of 0.96 A mm āˆ’1 and an ON-to-OFF ratio of 10 5 . This marks the first post-process diamond integration on a RF GaN HEMT device.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2024 - From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices [Crossref]
  2. 2021 - Emerging GaN technologies for power, RF, digital, and quantum computing applications: recent advances and prospects [Crossref]
  3. 2023 - Record RF power performance at 94 GHz from millimeter-wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs [Crossref]
  4. 2024 - Schottky barrier gate N-Polar GaN-on-Sapphire deep recess HEMT with record 10.5 dB linear gain and 50.2% PAE at 94 GHz [Crossref]
  5. 2024 - N-Polar deep recess GaN HEMT with a TiN schottky gate contact demonstrating 53.4% PAE and 3.7 W/mm associated Poutat 94 GHz [Crossref]
  6. 2020 - W-Band power performance of SiN-Passivated N-Polar GaN deep recess HEMTs [Crossref]
  7. 2001 - Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs [Crossref]
  8. 2019 - Assessment of self-heating effects under lateral scaling of GaN HEMTs [Crossref]
  9. 2024 - Lossless phonon transition through GaN-Diamond and Si-Diamond interfaces
  10. 2023 - Cooling future system-on-chips with diamond inter-tiers [Crossref]

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