Nitrogen-vacancy centers in epitaxial laterally overgrown diamond - towards up-scaling of color center-based quantum technologies
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-04-17 |
| Journal | Materials for Quantum Technology |
| Authors | Nimba Oshnik, Sebastian Westrich, Nina Burmeister, Oliver Opaluch, Lahcene Mehmel |
Abstract
Section titled āAbstractāAbstract Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g. via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of Āµ s, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal stress in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- **** - Unless otherwise stated, NV center refers to the negative charge state throughout the manuscript