Recent progress in surface activated bonding for 3D and heterogeneous integration
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-04-23 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Tadatomo Suga |
| Citations | 1 |
Abstract
Section titled āAbstractāAbstract This paper summarizes the historical development of the surface-activated bonding (SAB) method, based on surface activation achieved through energetic particle bombardment, such as Ar fast-atom beam irradiation, in an ultra-high vacuum background. Cleaning and activating surfaces enable high-strength bonding at room temperature without heat treatment. The standard SAB technique has been recently modified and extended to include heterogeneous semiconductor wafer bonding and three-dimensional integration, incorporating surface activation with simultaneous co-sputtering of a nano-adhesion layer, allowing the bonding of ionic crystals, glasses, and polymers. Furthermore, this study presents recent advancements in wafer-scale bonding of diamond materials to Wide Bandgap Semiconductors and explores the potential of SAB for Cu-Cu hybrid bonding. Finally, it introduces the latest developments in SAB for hybrid bonding and proposes a visionary approach for its future application in semiconductor processing and 3D device integration.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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