Supercontinuum generation in oxide and semiconductor materials (InP, Si, GaN, GaAs, PbMoO4, YVO4, ZGP, TiO2, diamond) pumped by radiation of the Cr -ZnS fs-MOPA system
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-04-25 |
| Journal | Journal of the Optical Society of America B |
| Authors | Rem Danilin, Sergey Vasilyev, Daniil Danilin, Dmitry Martyshkin, Vladimir Fedorov |
| Institutions | University of Rochester, IPG Photonics (United States) |
Abstract
Section titled āAbstractāUltrashort light sources in the middle-infrared range are highly beneficial for applications such as gas molecular spectroscopy, remote sensing, atmospheric science, medical treatments, and light-matter interaction studies. Ultrafast lasers utilizing chromium-doped ZnS/Se (Cr:ZnS/Se) have proven to be robust and stable solutions within this spectral region. Nonlinear spectral broadening is fundamentally important, as it pushes the pulse duration limits imposed by the bandwidth of laser media. In this study, we demonstrate the spectral broadening and supercontinuum generation in several bulk materials, including InP, Si, GaN, GaAs, PbMoO 4 , YVO 4 , diamond, and TiO 2 , using pump radiation with up to 4 W average power centered at 2.35 Āµm from a Cr:ZnS femtosecond MOPA system. Some of the investigated materials have excellent potential as effective media for middle-infrared supercontinuum generation, demonstrating the feasibility of developing a single-cycle pulse middle-infrared laser system.