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Quantum Sensing of Local Magnetic Phase Transitions and Fluctuations near the Curie Temperature in Tm3Fe5O12 Using NV Centers

MetadataDetails
Publication Date2025-05-28
JournalMicromachines
AuthorsYuqing Zhu, Mengyuan Cai, Qian Zhang, Peng Wang, Yuanjie Yang
InstitutionsUniversity of Science and Technology of China, Hefei Institutes of Physical Science
Citations1
AnalysisFull AI Review Included

This research presents the first quantitative investigation of local dynamic magnetic fluctuations in Thulium Iron Garnet (Tm3Fe5O12, TmIG) thin films using Nitrogen-Vacancy (NV) center quantum sensing.

  • Core Value Proposition: Established a versatile, multimodal framework combining nanoscale NV relaxometry (T1) with macroscopic techniques (MPMS, Hall effect) to probe local phase transition kinetics in high-temperature magnetic insulators.
  • Critical Finding: NV T1 relaxometry revealed a pronounced, quantifiable peak in the net relaxation rate (ΔΓ) near the Curie temperature (TC ≈ 360 K), providing direct evidence of enhanced critical spin fluctuations at the nanoscale.
  • Material Quality: High-quality, 20 nm thick TmIG films were fabricated via RF sputtering, exhibiting robust ferromagnetism (Hc = 35 Oe at 300 K) and high crystalline purity (XRD FWHM less than 0.05°).
  • NV Sensor Performance: The platform achieved submicron lateral spatial resolution (~360 nm) and high dynamic sensitivity (~1.6 ”T/sqrt(Hz)), enabling localized measurements inaccessible to conventional volume-averaged methods.
  • Transport Correlation: Hall measurements corroborated the magnetic findings, showing a prominent resistivity upturn near TC, attributed to increased spin-disorder scattering caused by the detected magnetic fluctuations.
  • Quantitative Dynamics: The temperature-dependent relaxation rate was fitted using a Gaussian fluctuation model, yielding a precise critical temperature TC = 359.8 ± 1.1 K and a peak fluctuation rate Γ0 ≈ 0.9 kHz.
ParameterValueUnitContext
Material SystemTm3Fe5O12 (TmIG) / Gd3Ga5O12 (GGG)N/AHigh TC magnetic insulator
TmIG Film Thickness20nmSputtered layer
TmIG Curie Temperature (TC)~360 (359.8 ± 1.1)KDetermined by M-T and NV T1 fit
TmIG Coercivity (Hc)35OeMeasured at 300 K
TmIG Lattice Mismatch-0.16%Relative to GGG substrate
NV Sensor TypeShallow 14N+ ensembleN/A[111]-oriented diamond
NV Implantation Depth~7nmBelow diamond surface
Lateral Spatial Resolution~360nmConfocal optical diffraction limit
Static Field Resolution±0.3”TNV sensor, improved by averaging
Dynamic Sensitivity~1.6”T/sqrt(Hz)NV ODMR system sensitivity
Peak Fluctuation Rate (Γ0)0.899 ± 0.026kHzGaussian fit of critical dynamics
System Thermal Driftless than 1.5K/hTracked via zero-field splitting (D)

1. TmIG Thin Film Fabrication (RF Magnetron Sputtering)

Section titled “1. TmIG Thin Film Fabrication (RF Magnetron Sputtering)”
  • Substrate: Gd3Ga5O12 (111) single crystal.
  • Deposition Temperature: 700 °C (Substrate).
  • RF Power: 100 W.
  • Working Pressure: 1.5 Pa.
  • Gas Flow Ratio: Ar/O2 = 4:1.
  • Growth Rate: Approximately 2.5 nm/min (20 nm total thickness).
  • Post-Processing: In situ annealing at 700 °C for 10 min to enhance crystallinity.
  • Diamond Material: High-purity, single-crystal [100]-oriented diamond grown via CVD, mechanically polished to [111] orientation.
  • Implantation: 14N+ ions implanted at 5 keV energy.
  • Dose: 1013 ions/cm2 (resulting in ~7 nm NV layer depth).
  • Annealing: 800 °C for 2 h under vacuum (5 x 10-5 Pa) to form NV complexes.
  • Cleaning: Mixed acid solution (H2SO4:HNO3:HClO4, 1:1:1 by volume) at 220 °C for 2 h.
  • Setup: Custom confocal platform with [111]-oriented NV diamond placed in direct contact with the TmIG film.
  • Static Field Measurement (ODMR): Used Zeeman splitting (ΔΜ) of the ms = ±1 states to determine the local magnetic field projection (BNV).
  • Dynamic Fluctuation Measurement (T1 Relaxometry): Employed a π-τ-π pulse sequence to measure the NV spin relaxation rate (Γ = 1/T1).
  • Noise Isolation: Net relaxation rate (ΔΓ) was calculated by subtracting the phonon-mediated relaxation rate measured at a remote reference site (Γr) from the probe site rate (Γp), isolating magnetic noise originating specifically from the TmIG film.
  • Magnetometry (MPMS VSM): Measured M-H loops (300 K) and temperature-dependent magnetization (M-T) curves (Field-Cooled mode, 5 kOe).
  • Electrical Transport (PPMS): Measured longitudinal resistivity (ρxx) and Hall resistance using photolithographically defined Hall bar devices (200 ”m x 20 ”m).

The integration of high-TC magnetic insulators with nanoscale quantum sensing capabilities is critical for advancing several quantum and spintronic technologies.

Application AreaRelevance to TmIG/NV Technology
High-Temperature SpintronicsTmIG’s TC greater than room temperature enables robust, energy-efficient spintronic devices (e.g., spin-wave waveguides, spin-torque devices) suitable for industrial environments.
Magnetic Memory (MRAM)The strong perpendicular magnetic anisotropy of TmIG is ideal for developing high-density, thermally stable magnetic random-access memory architectures.
Nanoscale Quantum SensingThe NV platform offers noninvasive, quantitative mapping of magnetic noise and dynamic phenomena (e.g., critical fluctuations, domain wall motion) in complex magnetic heterostructures.
Fundamental Materials ResearchProvides a unique tool for studying the intrinsic coupling between electron conduction and localized spin dynamics, crucial for designing new quantum materials.
Integrated Sensor TechnologyThe diamond NV sensor, operating at ambient temperature with submicron resolution, is a candidate for integration into micro-electromechanical systems (MEMS) for localized magnetic field detection and characterization.
View Original Abstract

Thulium iron garnet (Tm3Fe5O12, TmIG) is a promising material for next-generation spintronic and quantum technologies owing to its high Curie temperature and strong perpendicular magnetic anisotropy. However, conventional magnetometry techniques are limited by insufficient spatial resolution and sensitivity to probe local magnetic phase transitions and critical spin dynamics in thin films. In this study, we present the first quantitative investigation of local magnetic field fluctuations near the Curie temperature in TmIG thin films using nitrogen-vacancy (NV) center-based quantum sensing. By integrating optically detected magnetic resonance (ODMR) and NV spin relaxometry (T1 measurements) with macroscopic techniques such as SQUID magnetometry and Hall effect measurements, we systematically characterize both the static magnetization and dynamic spin fluctuations across the magnetic phase transition. Our results reveal a pronounced enhancement in NV spin relaxation rates near 360 K, providing direct evidence of critical spin fluctuations at the nanoscale. This work highlights the unique advantages of NV quantum sensors for investigating dynamic critical phenomena in complex magnetic systems and establishes a versatile, multimodal framework for studying local phase transition kinetics in high-temperature magnetic insulators.

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