Quantum Sensing of Local Magnetic Phase Transitions and Fluctuations near the Curie Temperature in Tm3Fe5O12 Using NV Centers
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2025-05-28 |
| Journal | Micromachines |
| Authors | Yuqing Zhu, Mengyuan Cai, Qian Zhang, Peng Wang, Yuanjie Yang |
| Institutions | University of Science and Technology of China, Hefei Institutes of Physical Science |
| Citations | 1 |
| Analysis | Full AI Review Included |
Executive Summary
Section titled âExecutive SummaryâThis research presents the first quantitative investigation of local dynamic magnetic fluctuations in Thulium Iron Garnet (Tm3Fe5O12, TmIG) thin films using Nitrogen-Vacancy (NV) center quantum sensing.
- Core Value Proposition: Established a versatile, multimodal framework combining nanoscale NV relaxometry (T1) with macroscopic techniques (MPMS, Hall effect) to probe local phase transition kinetics in high-temperature magnetic insulators.
- Critical Finding: NV T1 relaxometry revealed a pronounced, quantifiable peak in the net relaxation rate (ÎÎ) near the Curie temperature (TC â 360 K), providing direct evidence of enhanced critical spin fluctuations at the nanoscale.
- Material Quality: High-quality, 20 nm thick TmIG films were fabricated via RF sputtering, exhibiting robust ferromagnetism (Hc = 35 Oe at 300 K) and high crystalline purity (XRD FWHM less than 0.05°).
- NV Sensor Performance: The platform achieved submicron lateral spatial resolution (~360 nm) and high dynamic sensitivity (~1.6 ”T/sqrt(Hz)), enabling localized measurements inaccessible to conventional volume-averaged methods.
- Transport Correlation: Hall measurements corroborated the magnetic findings, showing a prominent resistivity upturn near TC, attributed to increased spin-disorder scattering caused by the detected magnetic fluctuations.
- Quantitative Dynamics: The temperature-dependent relaxation rate was fitted using a Gaussian fluctuation model, yielding a precise critical temperature TC = 359.8 ± 1.1 K and a peak fluctuation rate Î0 â 0.9 kHz.
Technical Specifications
Section titled âTechnical Specificationsâ| Parameter | Value | Unit | Context |
|---|---|---|---|
| Material System | Tm3Fe5O12 (TmIG) / Gd3Ga5O12 (GGG) | N/A | High TC magnetic insulator |
| TmIG Film Thickness | 20 | nm | Sputtered layer |
| TmIG Curie Temperature (TC) | ~360 (359.8 ± 1.1) | K | Determined by M-T and NV T1 fit |
| TmIG Coercivity (Hc) | 35 | Oe | Measured at 300 K |
| TmIG Lattice Mismatch | -0.16 | % | Relative to GGG substrate |
| NV Sensor Type | Shallow 14N+ ensemble | N/A | [111]-oriented diamond |
| NV Implantation Depth | ~7 | nm | Below diamond surface |
| Lateral Spatial Resolution | ~360 | nm | Confocal optical diffraction limit |
| Static Field Resolution | ±0.3 | ”T | NV sensor, improved by averaging |
| Dynamic Sensitivity | ~1.6 | ”T/sqrt(Hz) | NV ODMR system sensitivity |
| Peak Fluctuation Rate (Î0) | 0.899 ± 0.026 | kHz | Gaussian fit of critical dynamics |
| System Thermal Drift | less than 1.5 | K/h | Tracked via zero-field splitting (D) |
Key Methodologies
Section titled âKey Methodologiesâ1. TmIG Thin Film Fabrication (RF Magnetron Sputtering)
Section titled â1. TmIG Thin Film Fabrication (RF Magnetron Sputtering)â- Substrate: Gd3Ga5O12 (111) single crystal.
- Deposition Temperature: 700 °C (Substrate).
- RF Power: 100 W.
- Working Pressure: 1.5 Pa.
- Gas Flow Ratio: Ar/O2 = 4:1.
- Growth Rate: Approximately 2.5 nm/min (20 nm total thickness).
- Post-Processing: In situ annealing at 700 °C for 10 min to enhance crystallinity.
2. Diamond NV Sensor Preparation
Section titled â2. Diamond NV Sensor Preparationâ- Diamond Material: High-purity, single-crystal [100]-oriented diamond grown via CVD, mechanically polished to [111] orientation.
- Implantation: 14N+ ions implanted at 5 keV energy.
- Dose: 1013 ions/cm2 (resulting in ~7 nm NV layer depth).
- Annealing: 800 °C for 2 h under vacuum (5 x 10-5 Pa) to form NV complexes.
- Cleaning: Mixed acid solution (H2SO4:HNO3:HClO4, 1:1:1 by volume) at 220 °C for 2 h.
3. NV Quantum Magnetometry (ODMR and T1 Relaxometry)
Section titled â3. NV Quantum Magnetometry (ODMR and T1 Relaxometry)â- Setup: Custom confocal platform with [111]-oriented NV diamond placed in direct contact with the TmIG film.
- Static Field Measurement (ODMR): Used Zeeman splitting (ÎΜ) of the ms = ±1 states to determine the local magnetic field projection (BNV).
- Dynamic Fluctuation Measurement (T1 Relaxometry): Employed a Ï-Ï-Ï pulse sequence to measure the NV spin relaxation rate (Î = 1/T1).
- Noise Isolation: Net relaxation rate (ÎÎ) was calculated by subtracting the phonon-mediated relaxation rate measured at a remote reference site (Îr) from the probe site rate (Îp), isolating magnetic noise originating specifically from the TmIG film.
4. Macroscopic Characterization
Section titled â4. Macroscopic Characterizationâ- Magnetometry (MPMS VSM): Measured M-H loops (300 K) and temperature-dependent magnetization (M-T) curves (Field-Cooled mode, 5 kOe).
- Electrical Transport (PPMS): Measured longitudinal resistivity (Ïxx) and Hall resistance using photolithographically defined Hall bar devices (200 ”m x 20 ”m).
Commercial Applications
Section titled âCommercial ApplicationsâThe integration of high-TC magnetic insulators with nanoscale quantum sensing capabilities is critical for advancing several quantum and spintronic technologies.
| Application Area | Relevance to TmIG/NV Technology |
|---|---|
| High-Temperature Spintronics | TmIGâs TC greater than room temperature enables robust, energy-efficient spintronic devices (e.g., spin-wave waveguides, spin-torque devices) suitable for industrial environments. |
| Magnetic Memory (MRAM) | The strong perpendicular magnetic anisotropy of TmIG is ideal for developing high-density, thermally stable magnetic random-access memory architectures. |
| Nanoscale Quantum Sensing | The NV platform offers noninvasive, quantitative mapping of magnetic noise and dynamic phenomena (e.g., critical fluctuations, domain wall motion) in complex magnetic heterostructures. |
| Fundamental Materials Research | Provides a unique tool for studying the intrinsic coupling between electron conduction and localized spin dynamics, crucial for designing new quantum materials. |
| Integrated Sensor Technology | The diamond NV sensor, operating at ambient temperature with submicron resolution, is a candidate for integration into micro-electromechanical systems (MEMS) for localized magnetic field detection and characterization. |
View Original Abstract
Thulium iron garnet (Tm3Fe5O12, TmIG) is a promising material for next-generation spintronic and quantum technologies owing to its high Curie temperature and strong perpendicular magnetic anisotropy. However, conventional magnetometry techniques are limited by insufficient spatial resolution and sensitivity to probe local magnetic phase transitions and critical spin dynamics in thin films. In this study, we present the first quantitative investigation of local magnetic field fluctuations near the Curie temperature in TmIG thin films using nitrogen-vacancy (NV) center-based quantum sensing. By integrating optically detected magnetic resonance (ODMR) and NV spin relaxometry (T1 measurements) with macroscopic techniques such as SQUID magnetometry and Hall effect measurements, we systematically characterize both the static magnetization and dynamic spin fluctuations across the magnetic phase transition. Our results reveal a pronounced enhancement in NV spin relaxation rates near 360 K, providing direct evidence of critical spin fluctuations at the nanoscale. This work highlights the unique advantages of NV quantum sensors for investigating dynamic critical phenomena in complex magnetic systems and establishes a versatile, multimodal framework for studying local phase transition kinetics in high-temperature magnetic insulators.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
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