Study on Diamond NV Centers Excited by Green Light Emission from OLEDs
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2025-08-22 |
| Journal | Photonics |
| Authors | Yangyang Guo, Xin Li, Fuwen Shi, Wenjun Wang, Bo Li |
| Institutions | East China Normal University, Liaocheng University |
| Analysis | Full AI Review Included |
Executive Summary
Section titled âExecutive SummaryâThis study successfully demonstrates the integration of Organic Light-Emitting Diodes (OLEDs) as efficient, planar excitation sources for Nitrogen-Vacancy (NV) centers in diamond, enabling significant system miniaturization for quantum sensing applications.
- Core Achievement: Effective optical excitation of NV centers using an ITO-anode OLED device, subsequently optimized via interfacial engineering.
- Material Innovation: Fabrication of a hybrid anode using Graphene Oxide (GO)/Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) composite (40% GO ratio).
- Excitation Efficiency: The optimized 40% hybrid anode device achieved a 3.7 times enhancement in NV center fluorescence peak intensity compared to the conventional ITO-anode device.
- Power Optimization: The hybrid anode reduced the operating voltage required for equivalent NV emission intensity from 19.5 V (ITO) to 14 V, resulting in a 22% reduction in power consumption.
- Anode Performance: The optimized anode exhibited superior electrical properties, including a high conductivity of 4032 S/cm and a maximum work function (ÎŚ) of 5.014 eV, minimizing the hole injection barrier.
- Quantum Readout: The miniaturized sensor demonstrated successful spin-state manipulation, achieving an ODMR Contrast Ratio (CR) of 3.0% and a Signal-to-Noise Ratio (SNR) of 41, significantly improving signal quality over the ITO reference (1.7% CR, 18 SNR).
Technical Specifications
Section titled âTechnical Specificationsâ| Parameter | Value | Unit | Context |
|---|---|---|---|
| NV Fluorescence Peak Intensity Enhancement | 3.7 | times | 40% Hybrid Anode vs. ITO Anode |
| Operating Voltage (Equivalent NV Intensity) | 14 | V | Optimized 40% Hybrid Anode |
| Operating Voltage (Equivalent NV Intensity) | 19.5 | V | ITO Reference Anode |
| Power Consumption Reduction | 22 | % | 40% Hybrid Anode vs. ITO Reference |
| Maximum Luminance | 36,271 | cd/m2 | 40% Hybrid Anode |
| Turn-on Voltage | 2.4 | V | 40% Hybrid Anode |
| Anode Work Function (ÎŚ) | 5.014 | eV | Optimized 40% GO/PEDOT:PSS |
| Anode Conductivity | 4032 | S/cm | Optimized 40% GO/PEDOT:PSS |
| ODMR Contrast Ratio (CR) | 3.0 | % | Optimized 40% Hybrid Anode |
| ODMR Signal-to-Noise Ratio (SNR) | 41 | N/A | Optimized 40% Hybrid Anode |
| Electron Beam Irradiation Dose | 1 x 1018 | e-/cm2 | NV center creation in diamond |
| NV Annealing Temperature | 800 | °C | 1 hour under high-purity N2 atmosphere |
| Diamond Type/N Concentration | Ib / ~100 | ppm | Substrate material |
Key Methodologies
Section titled âKey MethodologiesâThe experimental procedure involved the preparation of high-performance hybrid anodes, the fabrication of the OLED stack, and the creation of high-density NV centers in diamond.
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GO/PEDOT:PSS Hybrid Anode Preparation:
- GO was prepared at 0.5 mg/mL concentration using an optimized Hummerâs approach.
- PEDOT:PSS solution was blended with GO at various ratios (optimized at 40%).
- Films were spin-coated onto quartz/ITO substrates at 3000 rpm for 30 s, followed by annealing at 120 °C for 20 min.
-
Acidic Interfacial Engineering:
- Films were treated with 1 M HCl or 1 M H2SO4 at 160 °C (30 min for HCl, 1 h for H2SO4).
- This treatment promoted dissociation of PEDOT+ from PSS- chains, enhancing conductivity and increasing the work function (ÎŚ) to 5.014 eV.
-
OLED Device Fabrication:
- The device structure was: Anode / MoO3 (1 nm, HIL) / NPB (40 nm, HTL) / Alq3 (70 nm, EML) / BPhen (10 nm, ETL) / LiF (0.5 nm, EIL) / Al (100 nm, Cathode).
- Layers were sequentially evaporated under vacuum (below 5 x 10-4 Pa).
-
NV Center Creation:
- Type Ib diamond substrates (100 ppm N) were used.
- Samples were subjected to electron beam irradiation at a dose of 1 x 1018 e-/cm2.
- Post-irradiation annealing was performed in a tube furnace at 800 °C for 1 h under a high-purity nitrogen protective atmosphere to activate the NV centers.
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Sensor Integration:
- The diamond NV sample was fixed onto the light-emitting surface of the OLED using thermal adhesive.
- The integrated device included a microstrip antenna for microwave (MW) field delivery, enabling ODMR measurements.
Commercial Applications
Section titled âCommercial ApplicationsâThe successful integration of high-efficiency OLEDs with NV centers provides a pathway for the commercialization of compact quantum technologies, particularly in fields requiring high sensitivity and portability.
- Miniaturized Quantum Sensing: Development of highly compact, handheld quantum magnetometers, gyroscopes, and thermometers based on NV centers.
- Wearable Technology: The inherent flexibility of OLED technology facilitates the development of flexible quantum sensors for integration into wearable devices.
- Biomedical Imaging: Potential for high-sensitivity magnetic field imaging (e.g., picotesla magnetometry) in biological systems, leveraging the small footprint of the OLED excitation source.
- Optoelectronic Materials: The optimized GO/PEDOT:PSS hybrid anode material platform is directly applicable to high-performance, low-voltage flexible displays and other organic electronic devices.
- Industrial Monitoring: Use in systems requiring precise, localized temperature or magnetic field monitoring in harsh or space-constrained environments.
View Original Abstract
This study demonstrates the feasibility of exciting NV centers using ITO-anode OLED devices, followed by the fabrication of GO/PEDOT:PSS hybrid anodes via spin-coating. Through interfacial modification, the OLED devices exhibit significantly enhanced luminescence intensity, leading to improved NV center excitation efficiency. Experimental results show that the optimized GO/PEDOT:PSS (40%) hybrid anode device achieves a lower turn-on voltage, with the NV center fluorescence peak intensity reaching 3.7 times that of the ITO-anode device, confirming the enhanced excitation effect through interfacial engineering of the light source. By integrating NV centers with OLED technology, this work establishes a new approach for efficient excitation. This integration approach provides a new pathway for applications such as quantum sensing.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
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