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Study on Diamond NV Centers Excited by Green Light Emission from OLEDs

MetadataDetails
Publication Date2025-08-22
JournalPhotonics
AuthorsYangyang Guo, Xin Li, Fuwen Shi, Wenjun Wang, Bo Li
InstitutionsEast China Normal University, Liaocheng University
AnalysisFull AI Review Included

This study successfully demonstrates the integration of Organic Light-Emitting Diodes (OLEDs) as efficient, planar excitation sources for Nitrogen-Vacancy (NV) centers in diamond, enabling significant system miniaturization for quantum sensing applications.

  • Core Achievement: Effective optical excitation of NV centers using an ITO-anode OLED device, subsequently optimized via interfacial engineering.
  • Material Innovation: Fabrication of a hybrid anode using Graphene Oxide (GO)/Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) composite (40% GO ratio).
  • Excitation Efficiency: The optimized 40% hybrid anode device achieved a 3.7 times enhancement in NV center fluorescence peak intensity compared to the conventional ITO-anode device.
  • Power Optimization: The hybrid anode reduced the operating voltage required for equivalent NV emission intensity from 19.5 V (ITO) to 14 V, resulting in a 22% reduction in power consumption.
  • Anode Performance: The optimized anode exhibited superior electrical properties, including a high conductivity of 4032 S/cm and a maximum work function (ÎŚ) of 5.014 eV, minimizing the hole injection barrier.
  • Quantum Readout: The miniaturized sensor demonstrated successful spin-state manipulation, achieving an ODMR Contrast Ratio (CR) of 3.0% and a Signal-to-Noise Ratio (SNR) of 41, significantly improving signal quality over the ITO reference (1.7% CR, 18 SNR).
ParameterValueUnitContext
NV Fluorescence Peak Intensity Enhancement3.7times40% Hybrid Anode vs. ITO Anode
Operating Voltage (Equivalent NV Intensity)14VOptimized 40% Hybrid Anode
Operating Voltage (Equivalent NV Intensity)19.5VITO Reference Anode
Power Consumption Reduction22%40% Hybrid Anode vs. ITO Reference
Maximum Luminance36,271cd/m240% Hybrid Anode
Turn-on Voltage2.4V40% Hybrid Anode
Anode Work Function (ÎŚ)5.014eVOptimized 40% GO/PEDOT:PSS
Anode Conductivity4032S/cmOptimized 40% GO/PEDOT:PSS
ODMR Contrast Ratio (CR)3.0%Optimized 40% Hybrid Anode
ODMR Signal-to-Noise Ratio (SNR)41N/AOptimized 40% Hybrid Anode
Electron Beam Irradiation Dose1 x 1018e-/cm2NV center creation in diamond
NV Annealing Temperature800°C1 hour under high-purity N2 atmosphere
Diamond Type/N ConcentrationIb / ~100ppmSubstrate material

The experimental procedure involved the preparation of high-performance hybrid anodes, the fabrication of the OLED stack, and the creation of high-density NV centers in diamond.

  1. GO/PEDOT:PSS Hybrid Anode Preparation:

    • GO was prepared at 0.5 mg/mL concentration using an optimized Hummer’s approach.
    • PEDOT:PSS solution was blended with GO at various ratios (optimized at 40%).
    • Films were spin-coated onto quartz/ITO substrates at 3000 rpm for 30 s, followed by annealing at 120 °C for 20 min.
  2. Acidic Interfacial Engineering:

    • Films were treated with 1 M HCl or 1 M H2SO4 at 160 °C (30 min for HCl, 1 h for H2SO4).
    • This treatment promoted dissociation of PEDOT+ from PSS- chains, enhancing conductivity and increasing the work function (ÎŚ) to 5.014 eV.
  3. OLED Device Fabrication:

    • The device structure was: Anode / MoO3 (1 nm, HIL) / NPB (40 nm, HTL) / Alq3 (70 nm, EML) / BPhen (10 nm, ETL) / LiF (0.5 nm, EIL) / Al (100 nm, Cathode).
    • Layers were sequentially evaporated under vacuum (below 5 x 10-4 Pa).
  4. NV Center Creation:

    • Type Ib diamond substrates (100 ppm N) were used.
    • Samples were subjected to electron beam irradiation at a dose of 1 x 1018 e-/cm2.
    • Post-irradiation annealing was performed in a tube furnace at 800 °C for 1 h under a high-purity nitrogen protective atmosphere to activate the NV centers.
  5. Sensor Integration:

    • The diamond NV sample was fixed onto the light-emitting surface of the OLED using thermal adhesive.
    • The integrated device included a microstrip antenna for microwave (MW) field delivery, enabling ODMR measurements.

The successful integration of high-efficiency OLEDs with NV centers provides a pathway for the commercialization of compact quantum technologies, particularly in fields requiring high sensitivity and portability.

  • Miniaturized Quantum Sensing: Development of highly compact, handheld quantum magnetometers, gyroscopes, and thermometers based on NV centers.
  • Wearable Technology: The inherent flexibility of OLED technology facilitates the development of flexible quantum sensors for integration into wearable devices.
  • Biomedical Imaging: Potential for high-sensitivity magnetic field imaging (e.g., picotesla magnetometry) in biological systems, leveraging the small footprint of the OLED excitation source.
  • Optoelectronic Materials: The optimized GO/PEDOT:PSS hybrid anode material platform is directly applicable to high-performance, low-voltage flexible displays and other organic electronic devices.
  • Industrial Monitoring: Use in systems requiring precise, localized temperature or magnetic field monitoring in harsh or space-constrained environments.
View Original Abstract

This study demonstrates the feasibility of exciting NV centers using ITO-anode OLED devices, followed by the fabrication of GO/PEDOT:PSS hybrid anodes via spin-coating. Through interfacial modification, the OLED devices exhibit significantly enhanced luminescence intensity, leading to improved NV center excitation efficiency. Experimental results show that the optimized GO/PEDOT:PSS (40%) hybrid anode device achieves a lower turn-on voltage, with the NV center fluorescence peak intensity reaching 3.7 times that of the ITO-anode device, confirming the enhanced excitation effect through interfacial engineering of the light source. By integrating NV centers with OLED technology, this work establishes a new approach for efficient excitation. This integration approach provides a new pathway for applications such as quantum sensing.

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