Integration of GaAs-on-Si MOSFET and Ultra-Wideband (UWB) Semiconductor Technology for Next-Generation High-Performance Devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-10-17 |
| Journal | International Journal on Advanced Science Engineering and Information Technology |
| Authors | Ashish Vilas Jawake, Suresh Damodar Shirbahadurkar |
Abstract
Section titled āAbstractāSilicon-based technologies have played a pivotal role in making semiconductor devices widely available. Still, as the demand for high-performance SOI device technology increases, traditional methods of producing SOI wafer process technology are becoming increasingly limited. This work proposes a two-pronged approach that merges a novel GaAs-on-Si metal-oxide-semiconductor field-effect transistors (MOSFET) with state-of-the-art ultra-wide-band (UWB) semiconductor materials to tackle these issues. The GaAs-on-Si MOSFET exhibited optical properties as well as remarkable electrical performance with 40% enhanced on-state current (ION), minimized gate capacitance (CGG), higher unity gains frequency (fT), and greater gate trans-conductance (GM) values in comparison to established silicon MOSFETs, which were fabricated on inexpensive molecular beam epitaxy (MBE) substrates. Its ruggedness and capabilities make it very attractive for high-speed and analogue applications. In parallel, the broadening of the bandgap in materials such as Gallium Nitride (GaN), Aluminum Gallium Nitride (AlGaN), and diamond gives them unique characteristics of high electron mobility, breakdown voltage, and thermal conductivity that are essential in power-sensitive applications, including renewable energy systems and electric vehicles. The research provides an in-depth comparative study of the GaAs-on-Si device technology with the UWB technology, establishing their superiority over the existing silicon devices and their compatibility with many of the state-of-the-art semiconductor fabrication processes. This not only employs the complementary advantages of GaAs-on-Si MOSFETs and UWB materials but also facilitates innovative improvements in high-performance electronics in future work. These findings demonstrate the ability of these innovations to instigate disruptive changes in sectors from power electronics to communications systems, where next-generation semiconductor technologies are imperative.