Diamond Based Field‐Effect Transistors of Zr Gate with SiNx Dielectric Layers
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | Journal of Nanomaterials |
| Authors | Wei Wang, Chao Hu, S. Y. Li, Fengnan Li, Zhichao Liu |
| Institutions | Xi’an Jiaotong University |
| Citations | 19 |
Abstract
Section titled “Abstract”Investigation of Zr‐gate diamond field‐effect transistor with SiN x dielectric layers (SD‐FET) has been carried out. SD‐FET works in normally on depletion mode with p‐type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 10 13 cm −2 and 24.4 cm 2 ·V −1 ·s −1 , respectively. The output and transfer properties indicate the preservation of conduction channel because of the SiN x dielectric layer, which may be explained by the interface bond of C‐N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC‐FET) is also fabricated.