Growth and Emission Spectra Analysis of Single Crystal Diamond by MPCVD
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | Rengong jingti xuebao |
| Authors | Wu Cha |
| Institutions | Wuhan Institute of Technology |
Abstract
Section titled āAbstractāThe plasma emission spectroscopy in the process of single crystal diamond growth using microwave plasma chemical vapor deposition was measured near the substrate region. The influence of methane concentration on the species emission intensity was studied. The relationships of growth rate and quality of the homoexpiaxy diamond with the relative intensity of the different species were also analyzed. The grown single crystal diamond was characterized by Raman spectroscopy and SEM. The results show that the intensity of C2,HĪ²,HĪ³and CH spectral line increase with the increasing of methane concentration and that the intensity of HĪ±almost donāt change. Meanwhile,the relative intensity ratio of the I( HĪ³) /I( HĪ²),I( C2) /I( CH) and I( C2) /I( HĪ±) increases as the methane concentration increasing. Elevating the ratio of the I( C2) /I( CH) is harmful for the growth of single crystal diamond. Growth rate tests indicate that the growth rate increases with the ratio of I( C2) /I( HĪ±),the growth rate increases exponentially as I( C2) /I( HĪ±) increasing,while the increase trend becomes slow,the growth rate shows a linear increasing with the increasing of I( C2) /I( HĪ±) when the ratio is over 0. 35.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None