Preparation of CuO-Ta<SUB>2</SUB>O<SUB>5</SUB> Composites Using a Simple Co-Sputtering Method
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | Journal of Materials Science and Chemical Engineering |
| Authors | Kenta Miura, T. Osawa, Yuya Yokota, Zobaer Hossain, Osamu Hanaizumi |
| Institutions | Kiryu University, Gunma University |
| Citations | 4 |
Abstract
Section titled āAbstractāWe prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond- wire saw, and the specimens were subsequently annealed at 600Ā°C - 900Ā°C. The X-ray diffraction and photoluminescence (PL) of the annealed specimens were evaluated. The CuO-Ta2O5 film annealed at 600Ā°C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength of 450 nm, due to the existence of Cu2+, was observed from the film. In contrast, the CuO-Ta2O5 films annealed at 700Ā°C, 800Ā°C, and 900Ā°C seemed to be tetragonal CuTa2O6 phases. We expect that good-quality CuTa2O6 films can be obtained using our very simple co-sputtering method and subsequent annealing above 900Ā°C. Such CuTa2O6 films can be used in chemisorptions conductometric gas sensors.