Simulations of Diamond Detectors with Schottky Contacts
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | 6th Int. Particle Accelerator Conf. (IPACā15), Richmond, VA, USA, May 3-8, 2015 |
| Authors | G. E. Bell, John R. Cary, Dimitre Dimitrov, Mengjia Gaowei, Dominic Meiser |
Abstract
Section titled āAbstractāWe present simulations of semiconductor devices using the code VSim (formerly Vorpal). The 3D simulations involve the movement and scattering of electrons and holes in the semiconductor, voltages which may be applied to external contacts, and self-consistent electrostatic fields inside the device. Particles may experience a Schottky barrier when moving between the semiconductor and a metal contact. Example devices include MOSFETs as well as a diamond X-ray detector. Our code VSim includes scattering models for GaAs and diamond, and runs in parallel on thousands of processors. We compare our simulation results with experimental results from a prototype diamond X-ray detector.