WeC-2-4 PLASMA FUSION CHEMICAL MECHANICAL POLISHING OF ULTRA-HARD-TO-PROCESS MATERIALS - Basic process characteristics for GaN substrate and prospective application toward diamond substrate
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | Proceedings of JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment IIP/ISPS joint MIPE |
| Authors | Koki Oyama, Toshiro Doi, Yasuhisa Sano, Syuhei KUROKAWA, Hideo Aida |
| Institutions | The University of Osaka, Kyushu University |
Abstract
Section titled āAbstractāAn Innovation in chemical mechanical polishing (CMP) is achieved and reported; the conventional CMP processing is combined with plasma chemical vaporization machining (P-CVM) technology for the first time in the world, which is named āplasma fusion CMPā, to obtain synergic effects by CMP and P-CVM for the realization of high efficiency surface treatment of hard-to-process materials such as silicon carbide (SiC) and gallium nitride (GaN) substrate. In this study, two kinds of processing method, CMP and plasma fusion CMP were compared in the processing experiments of hard-to-process material substrate. As a result from this experiment it has been confirmed that plasma fusion CMP can create smooth surface of substrate in smaller processing amount than CMP. These results indicate that our developed plasma fusion CMP can achieve high-efficiency and excellent planarization processing of hard-to-process material more effectively than conventional process. We think that this plasma fusion CMP can be applied for processing of diamond substrate.