Impact of the silicon on diamond structure for high temperature switching applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-02-18 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Hiroki Kanoya, Kentaro Nakagawa, Satoshi Matsumoto |
| Institutions | Kyushu Institute of Technology |
| Citations | 3 |
Abstract
Section titled āAbstractāThis paper reports comparisons of silicon-on-diamond (SOD) structure to the conventional silicon-on-insulator (SOI) for high temperature switching applications. For high temperature applications (>473 K), major loss is caused by on-resistance and leakage current. Shrinking the channel length increases loss at 573 K. The power MOSFETs fabricated on SOD substrate shows lower loss compared with that fabricated on the conventional SOI substrate because the SOD can suppress the self heating effect.