Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-03-09 |
| Journal | Physical Review B |
| Authors | Philippe St-Jean, G. Ăthier-Majcher, S. Francoeur |
| Institutions | Polytechnique Montréal |
| Citations | 9 |
Abstract
Section titled âAbstractâThe first comprehensive study is made of the exciton dynamics and spin-relaxation processes in isoelectronic centers in GaAs, single excitons bound to two nitrogen atoms. Such atomic defects may offer advantageous properties for quantum information applications over the more established quantum dots and NV centers in diamond. Time-resolved spectroscopy is coupled with a unique analytical model.