A New Capacitance-Voltage Model for Hydrogen-Terminated Diamond Mosfet
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-04-13 |
| Journal | ECS Transactions |
| Authors | Xi Zhou, Sacharia Albin |
| Institutions | Norfolk State University |
| Citations | 2 |
Abstract
Section titled āAbstractāA new device model that takes into account of a surface adsorbate layer (ADL) is generated to study the C-V characteristics of the hydrogen-terminated diamond (HTD) MOSFET. In this model, the ADL acts like a reservoir of hole carriers and forms a hetero-structure with the hydrogen-terminated diamond surface. Our device model is applied to the C-V characteristics of a practical device and the results match well. This work is helpful in computer-aided design and optimization of future HDT devices.